`ANJALAI AMMAL – MAHALINGAM ENGINEERING COLLEGE KOVILVENNI – 614 403 DEPARTMENT OF E.C.E ISO 9001:2008 CERTIFIED LESSON PLAN NAME OF THE FACULTY : V.DEEPA DEPARTMENT : ELECTRONICS AND COMMUNICATION SUBJECT CODE & SUBJECT : EC6201- ELECTRONICS DEVICES SEMESTER & BRANCH : II& ECE A &B Sec NUMBER OF PERIODS GIVEN IN THE SYLLABUS : 45 Text & Reference Books S.No Title Semiconductor Physics and Devices T1 Author Donald A Neaman R1 Fundamentals Semiconductor devices R2 Electron Devices and Circuit Theory L.No Unit No. of Publisher Third Edition, Tata Mc GrawHill Inc.2007. . Yang McGraw Hill International Edition, 1978 Robert Boylestad and Louis Nashelsky Pearson PrenticeHall, 10th edition,July 2008 Topic to be covered Page No.(s) of Text or Reference Book 1. SEMICONDUCTOR DIODE Introduction to materials and semiconductors RB2 (02-06) 2. Intrinsic and extrinsic semiconductor RB2 (07-10) 3. PN junction diode RB2 (10-16) Current equations TB1 (269- Diffusion and drift current densities 277) TB1 (154-173) forward and reverse bias characteristics of PN TB1 (238- junction diode Breakdown mechanism in PN junction diode 248) TB1( 231- Energy band structure of PN junction diode 232) TB1 (179- Switching Characteristics 180) TB1( 234- 4. 5. I 6. 7. 8. 9. 236) BIPOLAR JUNCTION Principle of Operation of PNP, NPN transistors RB2 (131- 11. Junctions-Early effect-Current equations 134) RB2 (131- 12. Input and Output characteristics of CE 134) RB2 (139-145) 13. configuratuion Input and Output characteristics of CB RB2 (134-138) 14. configuratuion Input and Output characteristics of CC RB2 (145-146) 10. II configuratuion, Comparison of CE,CB,CC -Current equations-Pinch off voltage 578) and its significance P channel JFETs – Drain and Transfer TB1 (571- characteristics. MOSFET Current equation .MESFET RB2 (369- 28. 39.Equivalent circuit model and its 25.Characteristics Hybrid -π model TB1 (418- 16. 37. NET NET Structure and operation of MESFET Schottky barrier diode 405) RB2 (801- Zener diode and its characteristics 806) RB2 (38-39) Operation of Varactor diode RB2 (806- Operation ofTunneldiode and its characteristics 809) RB2 (809- LASER diode NET TB1 (434436) LDR(light dependent resistor) 36. 31. 26.Threshold voltage -Channel length modulation.-Current equations-Pinch off voltage 578) 15. 30. TB1 (486-490) SPECIAL SEMICONDUCTOR DEVICES Metal-Semiconductor Junction. parameters FINFET 27. Multi Emitter Transistor. 22. III 23. RB2 (392399) 814) 34. Triac and its VI charcteristics 841) RB2 (845- . D-MOSFET Structure and Operation of Enhancement type 24. operation of N TB1 (571- channel JFETs 575) N channel JFETs – Drain and Transfer TB1 (571- characteristics. 32. 416) TB1 (416-418) FIELD EFFECT TRANSISTORS Intorduction to FET ant its types. Ebers Moll Model TB1 (413- Gummel Poon-model. DUAL GATE MOSFET 29. TB1( 502-504) 402) RB2 (402- Gallium Arsenide device 35. 38. Structure and Operation of depletion type MOSFET MOSFET. and its significance Intorduction to MOSFET ant its types. 19. 18. 20.Characteristics. RB2 (386-392) V POWER DEVICES AND DISPLAY DEVICES Operation of UJT and its VI charcteristics NET RB2 (848- Operation of SCR and its VI charcteristics 856) RB2 (831- Operation of Diac. h-parameter model 422) TB1 (418-422) 17. 21. IV 33. Power BJT TB1 (438-440) 41.848) 40.Opto Coupler TB1 (856- 44. LCD TB1 (647-650) RB2 (819- 42. Solar cell 858) TB1 (822-825) 45. CCD TB1 (447-448) 43. Power MOSFET.DMOS-VMOS TB1 (443-445) LED. Signature of the faculty member Signature of the HOD . 822) Photo transistor.